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Welser et al., 2011 - Google Patents

Probing the Radiative Limits of III-V Quantum Wells

Welser et al., 2011

Document ID
4973799614808132409
Author
Welser R
Laboutin O
Johnson W
Publication year
Publication venue
ECS Transactions

External Links

Snippet

High-voltage InGaAs quantum well devices are shown to operate in a regime of suppressed radiative recombination. A novel extended heterojunction structure is employed to reduce nonradiative recombination and expose the limiting n= 1 component of the diode current …
Continue reading at iopscience.iop.org (other versions)

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    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • H01L31/0264Inorganic materials
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    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
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    • Y02E10/54Material technologies
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