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Ivanov‐Omskii et al., 1980 - Google Patents

The epitaxial growth of CdxHg1− xTe from stoichiometric melts. Crystallization and diffusion

Ivanov‐Omskii et al., 1980

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Document ID
495298142029158655
Author
Ivanov‐Omskii V
Mironov K
Ogorodnikov V
Publication year
Publication venue
physica status solidi (a)

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Epitaxial layers of CdxHg1− xTe are grown from stoichiometric melts on CdTe and ZnTe substrates. Composition profiles of the layers are investigated. It is shown that the distribution of components through the thickness of the layer is defined by two processes …
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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