[go: up one dir, main page]

Sun et al., 2022 - Google Patents

Energy band engineering via “Bite” defect located on N= 8 armchair graphene nanoribbons

Sun et al., 2022

Document ID
4825057030911428143
Author
Sun S
Guan Y
Hao Z
Ruan Z
Zhang H
Lu J
Gao L
Zuo X
Cai J
Publication year
Publication venue
Nano Research

External Links

Snippet

Graphene nanoribbons (GNRs) not only share many superlative properties of graphene but also display an exceptional degree of tunability of their electronic properties. The bandgaps of GNRs depend greatly on their widths, edges, etc. Herein, we report the synthesis path and …
Continue reading at link.springer.com (other versions)

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/022—Carbon nanotubes
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00—Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032—Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045—Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048—Carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/0206—Nanosized carbon materials
    • C01B31/0293—Other structures, e.g. nano-onions, nano-scrolls, nano-horns, nano-cones or nano-walls
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B31/00—Carbon; Compounds thereof
    • C01B31/02—Preparation of carbon; Purification; After-treatment
    • C01B31/04—Graphite, including modified graphite, e.g. graphitic oxides, intercalated graphite, expanded graphite or graphene
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/20—Nanotubes characterized by their properties
    • C01B2202/22—Electronic properties

Similar Documents

Publication Publication Date Title
Sun et al. Energy band engineering via “Bite” defect located on N= 8 armchair graphene nanoribbons
Pawlak et al. Bottom-up synthesis of nitrogen-doped porous graphene nanoribbons
Liu et al. Epitaxially grown monolayer VSe2: an air-stable magnetic two-dimensional material with low work function at edges
Celis et al. Graphene nanoribbons: fabrication, properties and devices
Ruan et al. Epitaxial graphene on silicon carbide: Introduction to structured graphene
Hämäläinen et al. Quantum-confined electronic states in atomically well-defined graphene nanostructures
Giesbers et al. Charge transport gap in graphene antidot lattices
Cao et al. Spin-charge transport properties for graphene/graphyne zigzag-edged nanoribbon heterojunctions: a first-principles study
Jacobse et al. Mapping the conductance of electronically decoupled graphene nanoribbons
Park et al. Hole defects on two-dimensional materials formed by electron beam irradiation: toward nanopore devices
Eelbo et al. Influence of the degree of decoupling of graphene on the properties of transition metal adatoms
AU2017259105B2 (en) Dirac semimetal structure
US10954132B2 (en) Electronically abrupt borophene/organic lateral heterostructures and preparation thereof
Wang et al. Bandgap broadening at grain boundaries in single-layer MoS2
Deshpande et al. Scanning probe microscopy of graphene
Liu et al. Chevron-type graphene nanoribbons with a reduced energy band gap: Solution synthesis, scanning tunneling microscopy and electrical characterization
Mu et al. Resolving the intrinsic bandgap and edge effect of BiI3 film epitaxially grown on graphene
Walhout et al. Scanning tunneling spectroscopy study of the Dirac spectrum of germanene
Buchs et al. Creation of paired electron states in the gap of semiconducting carbon nanotubes by correlated hydrogen adsorption
Yin et al. On-surface synthesis of graphene nanoribbons with atomically precise structural heterogeneities and on-site characterizations
Que et al. On-surface synthesis of graphene nanoribbons on two-dimensional rare earth–gold intermetallic compounds
Chen et al. Recovery of edge states of graphene nanoislands on an iridium substrate by silicon intercalation
Jamdagni et al. Tunnelling characteristics of Stone–Wales defects in monolayers of Sn and group-V elements
Willems van Beveren et al. Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions
Dabrowski et al. Nitrogen doped epitaxial graphene on 4H-SiC (0001)–Experimental and theoretical study