Pastuovic et al., 2014 - Google Patents
Radiation hardness of n-type SiC Schottky diodesPastuovic et al., 2014
View PDF- Document ID
- 4638819480433983383
- Author
- Pastuovic Z
- Vittone E
- Siegele R
- Ohshima T
- Iwamoto N
- Forneris J
- Cohen D
- Capan I
- Publication year
External Links
Snippet
The results of recent IBIC and DLTS studies of radation damage in silicon carbide (SiC) diodes will be presented. n-type Schottky diodes prepared on an epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanned alpha particle microbeam (2 & 4 MeV …
- 229910010271 silicon carbide 0 title abstract description 22
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by the preceding groups
- G01N33/48—Investigating or analysing materials by specific methods not covered by the preceding groups biological material, e.g. blood, urine; Haemocytometers
- G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
- G01N33/5005—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving human or animal cells
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Audinot et al. | Highest resolution chemical imaging based on secondary ion mass spectrometry performed on the helium ion microscope | |
| Wirtz et al. | High-resolution high-sensitivity elemental imaging by secondary ion mass spectrometry: from traditional 2D and 3D imaging to correlative microscopy | |
| Lockyer et al. | Secondary ion mass spectrometry | |
| Kelly et al. | Atomic-scale tomography: A 2020 vision | |
| Liu et al. | Nano-tomography of porous geological materials using focused ion beam-scanning electron microscopy | |
| Escher et al. | Applications of high lateral and energy resolution imaging XPS with a double hemispherical analyser based spectromicroscope | |
| Alkemade et al. | Imaging and Nanofabrication With the Helium Ion Microscope of the V an L eeuwenhoek Laboratory in D elft | |
| De Castro et al. | Magnetic sector secondary ion mass spectrometry on FIB-SEM instruments for nanoscale chemical imaging | |
| Kelly | Atom-probe tomography | |
| Elbaum et al. | Toward compositional contrast by cryo-STEM | |
| Prasad et al. | Time‐of‐flight secondary ion mass spectrometric analysis of polymer surfaces: A review | |
| Kamiya et al. | Microbeam complex at TIARA: Technologies to meet a wide range of applications | |
| Priebe et al. | Review of recent advances in gas-assisted focused ion beam time-of-flight secondary ion mass spectrometry (FIB-TOF-SIMS) | |
| Priebe et al. | Mechanisms of fluorine-induced separation of mass interference during TOF-SIMS analysis | |
| Alizadeh et al. | Low-energy electron generation for biomolecular damage inquiry: Instrumentation and methods | |
| Yang et al. | Towards Construction of a Novel Nanometer-Resolution MeV-STEM for Imaging Thick Frozen Biological Samples | |
| Zucchiatti et al. | Ion beam analysis: New trends and challenges | |
| Friedmann et al. | FIB preparation and SEM investigations for three‐dimensional analysis of cell cultures on microneedle arrays | |
| Kelly et al. | Atomic-Scale Analytical Tomography: Concepts and Implications | |
| Pastuovic et al. | Radiation hardness of n-type SiC Schottky diodes | |
| Zewail | Micrographia of the twenty-first century: from camera obscura to 4D microscopy | |
| Krysztof et al. | Preliminary research on imaging in MEMS electron microscope | |
| Lawler et al. | Electron diagnostics for extreme high brightness nano-blade field emission cathodes | |
| Mackova et al. | Ion beams provided by small accelerators for material synthesis and characterization | |
| Malmqvist | Accelerator-based ion beam analysis—an overview and future prospects |