Heiland, 1958 - Google Patents
Feldeffekt und photoleitung an ZnO-einkristallenHeiland, 1958
- Document ID
- 4580850325701574699
- Author
- Heiland G
- Publication year
- Publication venue
- Journal of Physics and Chemistry of Solids
External Links
Snippet
It has been shown that atomic hydrogen produces an n-type accumulation layer on the surface of ZnO crystals. The high surface-conductivity associated with this layer can be lowered by adsorption of oxygen or by heating in a vacuum. In this way the surface …
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Heiland | Feldeffekt und photoleitung an ZnO-einkristallen | |
| DE1298209B (en) | Photoelectric semiconductor diode | |
| DE1032404B (en) | Process for the production of surface semiconductor elements with p-n layers | |
| Grögler et al. | Isotopenuntersuchungen zur Bestimmung der Herkunft römischer Bleirohre und Bleibarren | |
| DE1489135B2 (en) | Method for changing the doping of at least a part of a single-crystal semiconductor body | |
| DE1464315C3 (en) | Circuit arrangement with a radiation-sensitive semiconductor switching element | |
| DE1764066B1 (en) | Diamond nuclear radiation detector and process for its manufacture | |
| Bäro et al. | Korngrenzen als versetzungsquellen | |
| DE1930423C3 (en) | Method for manufacturing a semiconductor component | |
| DE1179644B (en) | Method and device for amplifying, generating or modulating electrical vibrations with a radiation-sensitive semiconductor component | |
| CH302297A (en) | Radiation detector connected to an evaluation device. | |
| DE2314422A1 (en) | PHOTODIOD | |
| Sanz | Physiko-chemische Grundlagen und apparative Neuentwicklungen in der quantitativen Ultramikroanalyse | |
| DE1105066B (en) | Semiconductor arrangement with an at least partially high-resistance cadmium telluride body and method for its production | |
| Berndt | Beugung langsamer Elektronen an kugelförmigen oxydierten Kupfer-Einkristallen | |
| DE1564406C3 (en) | Method for manufacturing a semiconductor device and semiconductor device manufactured therefrom | |
| DE2834306A1 (en) | DETECTOR ARRANGEMENT FOR PENETRATING RADIATION | |
| DE1789046B1 (en) | RADIATION DETECTOR WITH A SEMICONDUCTOR BODY WITH PHOTO THERMOMAGNETIC EFFECT | |
| DE2836796A1 (en) | METHOD FOR CHANGING THE ELECTRICAL PROPERTIES OF A UNIJUNCTION TRANSISTOR AND THE PRODUCT OBTAINED BY THIS METHOD | |
| Bartl | Zur Radikalkinetik im Vakuumbestrahlten Polyvinylchlorid | |
| Hügging | Der ATLAS Pixelsensor: Der state-of-the art Pixelsensor für teilchenphysikalische Anwendungen mit extrem hohen Strahlungsfeldern | |
| DE1268116B (en) | Process for the production of a photoconductive semiconductor body from gallium phosphide which is at least partially activated with copper | |
| DE1789046C (en) | Radiation detector with a semi-conductor body with a photothermomagnetic effect | |
| Matossi et al. | Elektronenbeweglichkeit in Zinksulfid-Einkristallen | |
| Dausinger | Die Tieftemperaturerholung in elektronenbestrahltem Wolfram |