[go: up one dir, main page]

Sim et al., 2015 - Google Patents

Controlled doping of vacancy-containing few-layer MoS2 via highly stable thiol-based molecular chemisorption

Sim et al., 2015

Document ID
4573917403878085066
Author
Sim D
Kim M
Yim S
Choi M
Choi J
Yoo S
Jung Y
Publication year
Publication venue
ACS nano

External Links

Snippet

MoS2 is considered a promising two-dimensional active channel material for future nanoelectronics. However, the development of a facile, reliable, and controllable doping methodology is still critical for extending the applicability of MoS2. Here, we report surface …
Continue reading at pubs.acs.org (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
    • H01L51/0048Carbon nanotubes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/05Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture
    • H01L51/0504Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier multistep processes for their manufacture the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
    • H01L51/0508Field-effect devices, e.g. TFTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0052Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y40/00Manufacture or treatment of nano-structures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00Nano-technology for materials or surface science, e.g. nano-composites

Similar Documents

Publication Publication Date Title
Sim et al. Controlled doping of vacancy-containing few-layer MoS2 via highly stable thiol-based molecular chemisorption
Cai et al. Modulating carrier density and transport properties of MoS2 by organic molecular doping and defect engineering
Cho et al. Electrical and optical characterization of MoS2 with sulfur vacancy passivation by treatment with alkanethiol molecules
Vu et al. One-step synthesis of NbSe2/Nb-doped-WSe2 metal/doped-semiconductor van der Waals heterostructures for doping controlled ohmic contact
Cho et al. Recent advances in interface engineering of transition-metal dichalcogenides with organic molecules and polymers
Sarkar et al. Functionalization of transition metal dichalcogenides with metallic nanoparticles: implications for doping and gas-sensing
Liu et al. High-performance WSe2 field-effect transistors via controlled formation of in-plane heterojunctions
Corbet et al. Field effect transistors with current saturation and voltage gain in ultrathin ReS2
Lin et al. Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate
Huang et al. The organic–2D transition metal dichalcogenide heterointerface
Chen et al. Ultrathin all-2D lateral graphene/GaS/graphene UV photodetectors by direct CVD growth
Tosun et al. Air-stable n-doping of WSe2 by anion vacancy formation with mild plasma treatment
Zhang et al. Vanadium-doped monolayer MoS2 with tunable optical properties for field-effect transistors
Ahmad et al. Functionalized molybdenum disulfide nanosheets for 0D–2D hybrid nanostructures: photoinduced charge transfer and enhanced photoresponse
Guimaraes et al. Atomically thin ohmic edge contacts between two-dimensional materials
Yuan et al. Photoluminescence quenching and charge transfer in artificial heterostacks of monolayer transition metal dichalcogenides and few-layer black phosphorus
Peimyoo et al. Chemically driven tunable light emission of charged and neutral excitons in monolayer WS2
Song et al. Electronic properties of a 1D intrinsic/p-doped heterojunction in a 2D transition metal dichalcogenide semiconductor
Sreeprasad et al. Controlled, defect-guided, metal-nanoparticle incorporation onto MoS2 via chemical and microwave routes: electrical, thermal, and structural properties
Kiriya et al. Air-stable surface charge transfer doping of MoS2 by benzyl viologen
Ma et al. Reversible semiconducting-to-metallic phase transition in chemical vapor deposition grown monolayer WSe2 and applications for devices
Kim et al. Electrical properties of synthesized large-area MoS2 field-effect transistors fabricated with inkjet-printed contacts
Tan et al. Doping graphene transistors using vertical stacked monolayer WS2 heterostructures grown by chemical vapor deposition
Feng et al. One-dimensional van der Waals heterojunction diode
Lei et al. Direct observation of semiconductor–metal phase transition in bilayer tungsten diselenide induced by potassium surface functionalization