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Horikiri et al. - Google Patents

Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching

Horikiri et al.

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Document ID
4471797174570615738
Author
Horikiri F
Ohta H
Asai N
Narita Y
Yoshida T
Mishima T

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Photo-electrochemical (PEC) etching was used to fabricate deep trench structures in a GaN- on-GaN epilayer grown on n-GaN substrates. A 50-nm thick Ti layer used for an etching mask was not removed even after etching to a depth of> 30 μm. The width of the side etching …
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