[go: up one dir, main page]

Liu, 2012 - Google Patents

Aluminum oxide hard mask fabrication by focused ion beam implantation and wet etching

Liu, 2012

View PDF
Document ID
4467533084824498739
Author
Liu Z
Publication year

External Links

Snippet

A novel aluminum oxide (Al2O3) hard mask fabrication process with nanoscale resolution is introduced in this work. The Al2O3 mask can be used for various purposes, and in this thesis it was utilized for silicon patterning using cryogenic deep reactive ion etching (DRIE) …
Continue reading at aaltodoc.aalto.fi (PDF) (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANO-TECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y40/00Manufacture or treatment of nano-structures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

Similar Documents

Publication Publication Date Title
US9653309B2 (en) Method for fabrication of high aspect ratio trenches and formation of nanoscale features therefrom
Fahrner Nanotechnology and nanoelectronics: materials, devices, measurement techniques
US7883839B2 (en) Method and apparatus for nano-pantography
US8557613B2 (en) Methods for designing, fabricating, and predicting shape formations in a material
US8557612B2 (en) Method for fabricating micro and nanostructures in a material
Henry et al. Ga+ beam lithography for nanoscale silicon reactive ion etching
Wanzenboeck et al. Focused ion beam lithography
US8084365B2 (en) Method of manufacturing a nano structure by etching, using a substrate containing silicon
Clericò et al. Electron beam lithography and its use on 2D materials
Bischoff Application of mass-separated focused ion beams in nano-technology
Hofmann et al. Selective pattern transfer of nano-scale features generated by FE-SPL in 10 nm thick resist layers
Liu Aluminum oxide hard mask fabrication by focused ion beam implantation and wet etching
Waid et al. Generation of 3D nanopatterns with smooth surfaces
Cui Nanoscale Pattern Transfer by Etching
Goswami Surface Micromachining—Advances and Advanced Characterization Techniques
Bischoff et al. Nanostructures by mass-separated FIB
Phan et al. Silicon micro-/nanomachining and applications
Con Nanolithography on non-planar surfaces and self-assembly of metal salt-polymer nanomaterials
Tian Sub 10 nm nanopantography and nanopattern transfer using highly selective plasma etching
Phan et al. Silicon Micro/Nanomachining and Applications
Nguyen Directional Nanoscale Silicon Etching using SF6 and O2 Plasma
Cui Nanoscale Pattern Transfer
Dialameh Fabrication and characterization of reference nano and micro structures for 3D chemical analysis
Samaan Fabrication of High-Performance Probes for Atomic Force Microscope (AFM).
Mantela Dry etching of sub-wavelength analogue gratings