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Hartmann et al., 2003 - Google Patents

Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates

Hartmann et al., 2003

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Document ID
4302672373902526158
Author
Hartmann J
Abbadie A
Vinet M
Clavelier L
Holliger P
Lafond D
Séméria M
Gentile P
Publication year
Publication venue
Journal of crystal growth

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Using a reduced pressure-chemical vapor deposition cluster tool, we have studied the epitaxial growth of Si using either a silane or a dichlorosilane+ hydrochloric acid chemistry on fullsheet, patterned and silicon-on-insulator (SOI) substrates. We have first of all …
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    • H01L21/02518—Deposited layers
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    • H01L21/02532—Silicon, silicon germanium, germanium
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