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Kamal et al., 2021 - Google Patents

L-shaped tunnel field-effect transistor-based 1T DRAM with improved read current ratio, retention time, and sense margin

Kamal et al., 2021

Document ID
4222235326828264027
Author
Kamal N
Kamal A
Singh J
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

In this article, an L-shaped tunnel field-effect transistor (LTFET)-based one-transistor dynamic random access memory (1T DRAM) with SiGe storage region was demonstrated through 2-D TCAD simulations. The SiGe storage is utilized to boost not only the sense …
Continue reading at ieeexplore.ieee.org (other versions)

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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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