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Pürlü et al., 2022 - Google Patents

Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

Pürlü et al., 2022

Document ID
4056976006671351740
Author
Pürlü K
Kocak M
Yolcu G
Perkitel I
Altuntaş
Demir I
Publication year
Publication venue
Materials Science in Semiconductor Processing

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Snippet

In this study, we report different SiH 4 flow condition effects on crystal, surface, optical, and electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to …
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