Yu et al., 2022 - Google Patents
Indium-based flip-chip interconnection for superconducting quantum computing applicationYu et al., 2022
- Document ID
- 4033544389286978332
- Author
- Yu J
- Zheng Y
- Zhou S
- Wang Q
- Wu S
- Wu H
- Li T
- Cai J
- Publication year
- Publication venue
- 2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
External Links
Snippet
As one of the mainstream physical implementation methods for quantum computing, superconducting qubit has gained much attention in recent years. However, commonly-used wire-bonding technique for signal transporting between external classical processor and …
- 229910052738 indium 0 title abstract description 28
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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