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Shibata et al., 1979 - Google Patents

Resistivity changes in laser‐annealed polycrystalline silicon during thermal annealing

Shibata et al., 1979

Document ID
3844859708493723836
Author
Shibata T
Iizuka H
Kohyama S
Gibbons J
Publication year
Publication venue
Applied Physics Letters

External Links

Snippet

Polycrystalline silicon layers heavily doped with phosphorus or arsenic were irradiated with a Nd: YAG pulsed laser beam. A 40–50% reduction in sheet resistivity was obtained by laser annealing. However, during subsequent heat treatments the resistivity increased to a value …
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