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Xu et al., 2013 - Google Patents

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case

Xu et al., 2013

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Document ID
3716584635791473088
Author
Xu C
Beeler R
Jiang L
Grzybowski G
Chizmeshya A
Menéndez J
Kouvetakis J
Publication year
Publication venue
Semiconductor science and technology

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We introduce a practical chemical vapor deposition strategy for next-generation Ge-on-Si epitaxy utilizing recently introduced Ge 4 H 10 hydride sources that confer unprecedented deposition efficiencies at very low-temperatures (< 400 C). The corresponding high growth …
Continue reading at www.academia.edu (PDF) (other versions)

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02524—Group 14 semiconducting materials
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    • H01L21/02546—Arsenides
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    • H01L21/02518—Deposited layers
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    • H01L21/02551—Group 12/16 materials
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    • H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material

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