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Sasa et al., 2011 - Google Patents

Microwave performance of ZnO/ZnMgO heterostructure field effect transistors

Sasa et al., 2011

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Document ID
3531016733039453486
Author
Sasa S
Maitani T
Furuya Y
Amano T
Koike K
Yano M
Inoue M
Publication year
Publication venue
Physica status solidi (a)

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We report the first microwave performance of single crystalline ZnO/ZnMgO heterostructure field‐effect transistors (HFETs). The structure consisted of a 15‐nm‐thick ZnO channel layer was grown by molecular beam epitaxy (MBE) on an a‐sapphire substrate. Two‐finger type …
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