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Tsuchimoto et al., 2019 - Google Patents

High Sensitive 2.4 GHz Band Rectenna with Direct Matching Topology

Tsuchimoto et al., 2019

Document ID
3522748875655423792
Author
Tsuchimoto S
Itoh K
Noguchi K
Ida J
Publication year
Publication venue
2019 IEEE Wireless Power Transfer Conference (WPTC)

External Links

Snippet

In this paper, the high sensitive 2.4 GHz band rectenna with direct matching topology is described. The rectenna is consisting of the inductive planar 3-strip folded dipole antenna with 10 kΩ impedance and the SOI-CMOS rectifier IC. The rectifier IC is fabricated on Global …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q1/00—Details of, or arrangements associated with, aerials
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/16—Resonant aerials with feed intermediate between the extremities of the aerial, e.g. centre-fed dipole
    • H01Q9/26—Resonant aerials with feed intermediate between the extremities of the aerial, e.g. centre-fed dipole with folded element or elements, the folded parts being spaced apart a small fraction of operating wavelength
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/16—Resonant aerials with feed intermediate between the extremities of the aerial, e.g. centre-fed dipole
    • H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q1/00—Details of, or arrangements associated with, aerials
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/30—Resonant aerials with feed to end of elongated active element, e.g. unipole
    • H01Q9/40—Element having extended radiating surface
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q1/00—Details of, or arrangements associated with, aerials
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/364—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith using a particular conducting material, e.g. supraconductor
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01Q—AERIALS
    • H01Q9/00—Electrically-short aerials having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant aerials
    • H01Q9/06—Details
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices

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