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Gogova et al., 2015 - Google Patents

Homo-and heteroepitaxial growth of Sn-doped β-Ga 2 O 3 layers by MOVPE

Gogova et al., 2015

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Document ID
3453466230659964423
Author
Gogova D
Schmidbauer M
Kwasniewski A
Publication year
Publication venue
CrystEngComm

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Layers of β-Ga2O3in situ doped with Sn were grown on Al2O3 (0001) and native β-Ga2O3 (100) substrates by metal organic vapor phase epitaxy. Homoepitaxial growth of good- quality Sn-doped β-Ga2O3 layers with rocking curve values comparable to that of …
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