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Simoen et al., 2003 - Google Patents

Electron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistors

Simoen et al., 2003

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Document ID
3406374281441615840
Author
Simoen E
Mercha A
Claeys C
Lukyanchikova N
Garhar N
Publication year
Publication venue
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003.

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The excess Lorentzian noise, associated with electron valence band (EVB) tunnelling is studied in fully depleted (FD) silicon-on-insulator (SOI) p-and n-MOSFETs, for different device lengths and with the back gate biased into accumulation. It. is shown that the …
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