[go: up one dir, main page]

Bertone et al., 1998 - Google Patents

High reliability, high-yield, high modulation bandwidth, low threshold current 1.55/spl mu/m MQW laser by new in-situ etching technique

Bertone et al., 1998

View HTML
Document ID
335155109591056090
Author
Bertone D
Campi R
Fang R
Meliga M
Morello G
Murgia S
Paoletti R
Publication year
Publication venue
24th European Conference on Optical Communication. ECOC'98 (IEEE Cat. No. 98TH8398)

External Links

Snippet

For the first time to our knowledge, an InP based Fabry-Perot MQW semiconductor laser is obtained by using an in-situ etching technique. Good static and dynamic laser characteristics together with high process yield and reliability confirm the validity of this new …
Continue reading at www.diva-portal.org (HTML) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure; Striped active layer
    • H01S5/2275—Buried mesa structure; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. alGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. alGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semi-conductor body to guide the optical wave; Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers)
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well, or supperlattice structures, e.g. single quantum well lasers (SQW lasers), multiple quantum well lasers (MQW lasers), graded index separate confinement hetrostructure lasers (GRINSCH lasers) in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01S—DEVICES USING STIMULATED EMISSION
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Similar Documents

Publication Publication Date Title
US4566171A (en) Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
CA2072632A1 (en) Structure and method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
EP0331103B1 (en) A method for producing an opto-electronic integrated circuit
US4661961A (en) Buried heterostructure devices with unique contact-facilitating layers
US5170228A (en) Opto-electronic integrated circuit
Dzurko et al. Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substrates
Scott et al. CODE: a novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides
Kjebon et al. 1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP: Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
US4766472A (en) Monolithic semiconductor structure of a laser and a field effect transistor
JP3317991B2 (en) Method of manufacturing buried stripe semiconductor laser using dry etching for stripe formation and laser obtained by this method
Koch et al. Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)
Bertone et al. High reliability, high-yield, high modulation bandwidth, low threshold current 1.55/spl mu/m MQW laser by new in-situ etching technique
Poulain et al. InGaAs photodiodes prepared by low-pressure MOCVD
EP1099283B1 (en) Electro-optic semiconductor devices and method for making the same
Shimoyama et al. Transverse junction buried heterostructure (TJ-BH) laser diode grown by MOVPE
Itoh et al. High-quality 1.3-μm GaInAsP-BH-lasers fabricated by MOVPE and dry-etching technique
Yang et al. Planar GaAs-AlGaAs MQW transverse junction ridge waveguide lasers using shallow zinc diffusion
Muroya et al. 100/spl deg/C, 10-Gb/s direct modulation with a low operation current of 1.3-/spl mu/m AlGaInAs buried heterostructure DFB laser diodes
US5866918A (en) Semiconductor light emitting device
Liévin et al. Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy
Bouadma et al. GaAs: GaAlAs ridge waveguide lasers and their monolithic integration using the ion beam etching process
US20250079803A1 (en) Semiconductor device and method for manufacturing same
Brillouet et al. Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers
Bertone et al. MOCVD regrowth of semi-insulating InP and pn junction blocking layers around laser active stripes
US5559821A (en) Semiconductor laser