Li et al., 2019 - Google Patents
Influence of room temperature sputtered Al-doped zinc oxide on passivation quality in silicon heterojunction solar cellsLi et al., 2019
View PDF- Document ID
- 3158663429871032432
- Author
- Li H
- Duan W
- Lambertz A
- Hüpkes J
- Ding K
- Rau U
- Astakhov O
- Publication year
- Publication venue
- IEEE Journal of Photovoltaics
External Links
Snippet
Al-doped zinc oxide (AZO) is a potential candidate to substitute tin-doped indium oxide in silicon heterojunction (SHJ) solar cells due to its low cost and low ecological impact. The AZO, sputtered at room temperature (RT), is of particular interest because of low thermal …
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon 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 [Si] 0 title abstract description 43
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/547—Monocrystalline silicon PV cells
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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