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Prathap et al., 2014 - Google Patents

Analysis of laser doping of silicon using different boron dopant sources

Prathap et al., 2014

Document ID
31465882939995349
Author
Prathap P
Bartringer J
Slaoui A
Publication year
Publication venue
Applied Surface Science

External Links

Snippet

Implementation of selective emitter that decouples the requirements for front doping and metallization leads to improve the efficiency of crystalline silicon solar cells. Formation of such an efficient selective emitter using a laser beam with a suitable wavelength is an …
Continue reading at www.sciencedirect.com (other versions)

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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