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Bereczki et al., 2020 - Google Patents

Three-level Nd: YLF Raman laser directly pumped by a beam shaped diode bar

Bereczki et al., 2020

Document ID
3022007538136119465
Author
Bereczki A
Paes J
Wetter N
Publication year
Publication venue
Laser Resonators, Microresonators, and Beam Control XXII

External Links

Snippet

Low heat generation can be obtained when pumping Nd: YLF at wavelengths of 872 nm and 880 nm and emitting at the three-level transition of 908 nm. These transitions show very low quantum defect with efficiencies of 0.96 and 0.97, respectively. However, the low average …
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    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
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    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
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    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
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    • H01S3/1063—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling a device placed within the cavity using a solid state device provided with at least one potential jump barrier
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