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Xiao et al., 2012 - Google Patents

Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

Xiao et al., 2012

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Document ID
2937338927216052931
Author
Xiao Y
Tang M
Xiong Y
Li J
Cheng C
Jiang B
Cai H
Tang Z
Lv X
Gu X
Zhou Y
Publication year
Publication venue
Current Applied Physics

External Links

Snippet

The surface potential and drain current of double-gate metal-ferroelectric-insulator- semiconductor (MFIS) field-effect transistor were investigated by using the ferroelectric negative capacitance. The derived results demonstrated that the up-converted …
Continue reading at www.academia.edu (PDF) (other versions)

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