Parak et al., 2010 - Google Patents
Quantum dotsParak et al., 2010
- Document ID
- 2854215499841501887
- Author
- Parak W
- Manna L
- Simmel F
- Gerion D
- Alivisatos P
- Publication year
- Publication venue
- Nanoparticles: from theory to application
External Links
Snippet
During the past decade, new directions of modern research, broadly defined as nanoscale science and technology, have emerged [1, 2]. These new trends involve the ability to fabricate, characterize, and manipulate artificial structures, the features of which are …
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y40/00—Manufacture or treatment of nano-structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANO-TECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
- B82Y15/00—Nano-technology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Schmid | Nanoparticles: from theory to application | |
Parak et al. | Quantum dots | |
Zwanenburg et al. | Silicon quantum electronics | |
Likharev | Single-electron devices and their applications | |
Ardavan et al. | Nanoscale solid-state quantum computing | |
Kuemmeth et al. | Carbon nanotubes for coherent spintronics | |
Davari et al. | Gate-defined accumulation-mode quantum dots in monolayer and bilayer w se 2 | |
Stroscio et al. | Integrated biological-semiconductor devices | |
Salfi et al. | Electronic properties of quantum dot systems realized in semiconductor nanowires | |
Gomanko et al. | Spin and orbital spectroscopy in the absence of Coulomb blockade in lead telluride nanowire quantum dots | |
Simonian et al. | Negative differential resistance at sequential single-electron tunnelling through atoms andmolecules | |
Ünlü et al. | Low dimensional semiconductor structures: characterization, modeling and applications | |
Parak et al. | Fundamental principles of quantum dots | |
Ilday et al. | Multiscale self-assembly of silicon quantum dots into an anisotropic three-dimensional random network | |
Ramezani et al. | Fundamental phenomena in nanoscale semiconductor devices | |
Simmel et al. | Wolfgang Johann Parak, Liberato Manna, Friedrich Christian | |
Kandil | The role of nanotechnology in electronic properties of materials | |
Daniels-Race | Nanodevices: fabrication, prospects for low dimensional devices and applications | |
Reinke | Inorganic nanostructures: properties and characterization | |
Knutsson | Atomic scale characterization of III-V nanowire surfaces | |
Mizuta et al. | Bottom-up approach to silicon nanoelectronics | |
Muralidharan et al. | Nanoscience and technology | |
Aluru et al. | Modeling electronics at the nanoscale | |
Oda | Quantum dot devices: Technology vehicles for nanoscale physics and paths for future applications | |
Goodnick | Transport in Nanostructures |