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Ahmad et al., 2021 - Google Patents

p-type AlN based heteroepitaxial diodes with Schottky, Pin, and junction barrier Schottky character achieving significant breakdown performance

Ahmad et al., 2021

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Document ID
2754903855675433957
Author
Ahmad H
Engel Z
Matthews C
Doolittle W
Publication year
Publication venue
Journal of Applied Physics

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The recent achievement of p-type AlN films via Be doping was utilized to achieve novel heteroepitaxial diodes with Schottky, Pin, and junction barrier Schottky (JBS) electrical behavior. Although the heteroepitaxial structures were quasi-vertical, which is subject to …
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