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Yoo et al., 1996 - Google Patents

Low resistance ohmic contact on p-type GaN grown by plasma-assisted molecular beam epitaxy

Yoo et al., 1996

Document ID
2728509456719241706
Author
Yoo M
Lee J
Myoung J
Shim K
Kim K
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

External Links

Snippet

Ohmic contacts on p-type GaN have been investigated. High quality GaN epilayers on cplane sapphire were prepared using plasma-assisted molecular beam epitaxy that utilized an inductively coupled rf nitrogen plasma source and solid source beams. The resulting film …
Continue reading at www.cambridge.org (other versions)

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L21/20 - H01L21/268
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