Shimada et al., 2000 - Google Patents
Preparation and properties of TiN and AlN films from alkoxide solution by thermal plasma CVD methodShimada et al., 2000
- Document ID
- 2711733827905360739
- Author
- Shimada S
- Yoshimatsu M
- Nagai H
- Suzuki M
- Komaki H
- Publication year
- Publication venue
- Thin Solid Films
External Links
Snippet
Single phase TiN and AlN films were prepared on a Si wafer from titanium tetra-etoxide and aluminum tri-butoxide solutions dissolved in ethanol and toluene, respectively, using an Ar/N2/H2 radio-frequency (rf) inductive thermal plasma chemical vapor deposition (CVD) …
- PIGFYZPCRLYGLF-UHFFFAOYSA-N aluminum nitride 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[Al]#N 0 title abstract description 57
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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Hirakuri et al. | Influence of the methane concentration on HF–CVD diamond under atmospheric pressure | |
Pasko et al. | Hafnium and zirconium tetramethylnonanedionates as new MOCVD precursors for oxide films | |
Zhou et al. | Formation of cubic boron nitride films on nickel substrates | |
Komatsu et al. | Synthesis of strontium oxide whiskers with preferential< 111> orientation by atmospheric chemical vapor deposition | |
Arockiasamy et al. | Plasma‐Assisted MOCVD of Titanium Oxide and its Composite Coatings Using Metallo‐organic Precursors | |
Park et al. | Structural characterization of diamond thin films prepared by plasma jet |