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Chan et al., 1986 - Google Patents

Rapid Thermal annealing of si implanted GaAs

Chan et al., 1986

Document ID
2689869356634212963
Author
Chan Y
Lin M
Publication year
Publication venue
Journal of electronic materials

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Snippet

Rapid thermal annealing (RTA) with incoherent light from tungsten lamps shows high potential relative to the conventional furnace annealing (FA) to activate the implanted dopant. Due to the short time annealing, it could completely eliminate the re-diffusion of …
Continue reading at link.springer.com (other versions)

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