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Saucedo et al., 2004 - Google Patents

Heavy metal doping of CdTe crystals

Saucedo et al., 2004

Document ID
2638209357773572554
Author
Saucedo E
Fornaro L
Sochinskii N
Cuna A
Corregidor V
Granados D
Diéguez E
Publication year
Publication venue
IEEE Transactions on Nuclear Science

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Snippet

CdTe crystals doped with several heavy metals (Hg, Tl, Pb, and Bi) in the concentration range of 10/sup 17/-10/sup 18/at/cm/sup 3/have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals was verified by chemical …
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
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    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
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    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

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