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Elgamel et al., 1995 - Google Patents

640 mV open-circuit voltage multicrystalline silicon solar cells: role of base doping on device parameters

Elgamel et al., 1995

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Document ID
2608947736373784059
Author
Elgamel H
Sivoththaman S
Ghannam M
Nijs J
Mertens R
Rodot M
Sarti D
Nam L
Publication year
Publication venue
Solar energy materials and solar cells

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The compensatory behaviour of open-circuit voltage (VOC) and short-circuit current (JSC) in function of the base resistivity of multicrystalline silicon (Polix) solar cells (4 cm2) is investigated. Thin substrates (200 μm) with base resistivities between 0.2 Ω. cm and 2.5 Ω …
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • H01L31/0224Electrodes
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    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/543Solar cells from Group II-VI materials
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    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
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    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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