Sagnes et al., 1992 - Google Patents

Transport and near‐infrared optical properties of ErSi2 thin films

Sagnes et al., 1992

Document ID: 25397531246087535
Author: Sagnes I; Vincent G; Badoz P
Publication year: 1992
Publication venue: Journal of applied physics

External Links

Cited by

Snippet

We present the study of the resistivity and Hall coefficient of ErSi2 thin films epitaxially grown on a Si substrate as a function of temperature and film thickness. Then, we report the first study of the complex index at energies below the silicon band gap (0.5–1 eV). From these …

Continue reading at pubs.aip.org (other versions)

239000010409 thin film 0 title abstract description 4

Classifications

- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux

Similar Documents

Publication	Publication Date	Title
Lopes et al.	1993	Minority carrier lifetime in mercury cadmium telluride
As et al.	1996	p-and n-type cubic GaN epilayers on GaAs
Wedepohl	1957	Electrical and optical properties of type IIb diamonds
Farmer et al.	1982	Charge transient spectroscopy
De Vegvar et al.	1988	Second-harmonic generation in submicrometer GaAs− Al x Ga 1− x As wires and rings
Soref	1967	Extrinsic ir photoconductivity of Si doped with B, Al, Ga, P, As, or Sb
Rajavel et al.	1997	High performance HgCdTe two-color infrared detectors grown by molecular beam epitaxy
De Souza et al.	1990	Minority‐carrier lifetime in p‐type (111) B HgCdTe grown by molecular‐beam epitaxy
Shen et al.	1992	Fermi level pinning in low‐temperature molecular beam epitaxial GaAs
Ahrenkiel et al.	2010	Comparison of techniques for measuring carrier lifetime in thin-film and multicrystalline photovoltaic materials
Assimos et al.	1974	The photoelectric threshold, work function, and surface barrier potential of single‐crystal cuprous oxide
Longeaud et al.	1999	Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods
Sagnes et al.	1992	Transport and near‐infrared optical properties of ErSi2 thin films
Brehm et al.	1972	Gamma‐Radiation Damage in Epitaxial Gallium Arsenide
Imanaka et al.	1994	Polaron cyclotron resonance observed for n-type ZnSe in high magnetic fields up to 180 T
Fastow et al.	1990	Shockley–Read recombination and trapping in p‐type HgCdTe
Voitsekhovskii et al.	2014	Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-Hg1–x Cd x Te (x= 0.31–0.32) in a Temperature Range OF 8–300 K
Geim et al.	1982	Shallow acceptor population and free hole concentration in Si: In and Si: Ga with IR-photoexcitation
Fujioka et al.	1995	Transient current study of low‐temperature grown GaAs using an n‐i‐n structure
del Alamo et al.	1983	Photovoltaic measurement of bandgap narrowing in moderately doped silicon
Baldini et al.	2000	Influence of substrate on the performances of semi-insulating GaAs detectors
Lozinskaya et al.	2019	Detailed analysis of quasi-ohmic contacts to high resistive GaAs: Cr structures
Ghin et al.	2020	Impact ionisation and temperature dependence of breakdown in Ga0. 52In0. 48P
McGregor et al.	1999	Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si: B/SiGe/Si heterostructures
Leung et al.	2002	Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers