Ning et al., 2024 - Google Patents
Passivating defects in ZnO electron transport layer for enhancing performance of red InP-based quantum dot light-emitting diodesNing et al., 2024
- Document ID
- 25280038344487584
- Author
- Ning M
- Zhao K
- Zhao L
- Cao S
- Zhao J
- Gao Y
- Yuan X
- Publication year
- Publication venue
- Materials Research Bulletin
External Links
Snippet
ZnO nanoparticles (NPs) are considered the most promising materials for electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs). Herein, we employed a synergistic strategy of Mg doping and ZnMgO shell coating to modify the defect states and energy levels …
- 239000002096 quantum dot 0 title abstract description 74
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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