[go: up one dir, main page]

Ning et al., 2024 - Google Patents

Passivating defects in ZnO electron transport layer for enhancing performance of red InP-based quantum dot light-emitting diodes

Ning et al., 2024

Document ID
25280038344487584
Author
Ning M
Zhao K
Zhao L
Cao S
Zhao J
Gao Y
Yuan X
Publication year
Publication venue
Materials Research Bulletin

External Links

Snippet

ZnO nanoparticles (NPs) are considered the most promising materials for electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs). Herein, we employed a synergistic strategy of Mg doping and ZnMgO shell coating to modify the defect states and energy levels …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/549Material technologies organic PV cells
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5203Electrodes
    • H01L51/5206Anodes, i.e. with high work-function material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/005Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene
    • H01L51/0062Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene aromatic compounds comprising a hetero atom, e.g.: N,P,S
    • H01L51/0071Polycyclic condensed heteroaromatic hydrocarbons
    • H01L51/0072Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ringsystem, e.g. phenanthroline, carbazole
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
    • H01L51/0077Coordination compounds, e.g. porphyrin
    • H01L51/0084Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2251/00Indexing scheme relating to organic semiconductor devices covered by group H01L51/00
    • H01L2251/50Organic light emitting devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; MISCELLANEOUS COMPOSITIONS; MISCELLANEOUS APPLICATIONS OF MATERIALS
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/42Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Similar Documents

Publication Publication Date Title
Wang et al. Cadmium-free InP/ZnSeS/ZnS heterostructure-based quantum dot light-emitting diodes with a ZnMgO electron transport layer and a brightness of over 10 000 cd m− 2
Sun et al. Efficient quantum dot light-emitting diodes with a Zn 0.85 Mg 0.15 O interfacial modification layer
KR102134481B1 (en) Perovskite photoelectric device, manufacturing method and perovskite material
Ning et al. Passivating defects in ZnO electron transport layer for enhancing performance of red InP-based quantum dot light-emitting diodes
Dong et al. 20.2: ultra‐bright, highly efficient, low roll‐off inverted quantum‐dot light emitting devices (QLEDs)
Kim et al. Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p-Type WO x Doped PEDOT: PSS and Li Doped ZnO Charge Generation Layer
Pan et al. Flexible quantum dot light emitting diodes based on ZnO nanoparticles
Ji et al. Highly efficient flexible quantum-dot light emitting diodes with an ITO/Ag/ITO cathode
Zhong et al. Improved color purity and efficiency of blue quantum dot light-emitting diodes
Jing et al. Highly efficient inverted quantum dot light-emitting diodes employing sol-gel derived Li-doped ZnO as electron transport layer
Kim et al. Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg)
CN107032392A (en) A kind of full-inorganic perovskite nanometer sheet and its preparation method and application
Ding et al. Solution-processed inorganic copper (I) thiocyanate as a hole injection layer for high-performance quantum dot-based light-emitting diodes
Mastria et al. Mastering heterostructured colloidal nanocrystal properties for light-emitting diodes and solar cells
Yun et al. CsPbBr3 perovskite quantum dot light‐emitting diodes using atomic layer deposited Al2O3 and ZnO interlayers
Heo et al. Highly efficient and low turn-on voltage quantum-dot light-emitting diodes using a ZnMgO/ZnO double electron transport layer
Guo et al. Boosting efficiency of InP quantum dots-based light-emitting diodes by an In-doped ZnO electron transport layer
Alsharafi et al. Boosting the performance of quantum dot light-emitting diodes with Mg and PVP Co-doped ZnO as electron transport layer
Chen et al. Highly-efficient and all-solution-processed red-emitting InP/ZnS-based quantum-dot light-emitting diodes enabled by compositional engineering of electron transport layers
Zheng et al. Solution-processed blue quantum-dot light-emitting diodes based on double hole transport layers: charge injection balance, solvent erosion control and performance improvement
Lee et al. Remarkable lifetime improvement of quantum-dot light emitting diodes by incorporating rubidium carbonate in metal-oxide electron transport layers
Xie et al. Stable mixed-cation perovskite light-emitting diodes
Mude et al. Performance enhancement by sol-gel processed Ni-doped ZnO layer in InP-based quantum dot light-emitting diodes
Cai et al. Defect passivation and electron band energy regulation of a ZnO electron transport layer through synergetic bifunctional surface engineering for efficient quantum dot light-emitting diodes
Ye et al. Efficient multi-shell CuInS2/ZnS/ZnS quantum-dots based light-emitting diodes: Time-controlled synthesis of quantum-dots and carrier balance effects of PEI