[go: up one dir, main page]

Nair et al., 2013 - Google Patents

ArchShield: Architectural framework for assisting DRAM scaling by tolerating high error rates

Nair et al., 2013

View PDF
Document ID
2477141008430199053
Author
Nair P
Kim D
Qureshi M
Publication year
Publication venue
ACM SIGARCH Computer Architecture News

External Links

Snippet

DRAM scaling has been the prime driver for increasing the capacity of main memory system over the past three decades. Unfortunately, scaling DRAM to smaller technology nodes has become challenging due to the inherent difficulty in designing smaller geometries, coupled …
Continue reading at dl.acm.org (PDF) (other versions)

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1064Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in cache or content addressable memories
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1048Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using arrangements adapted for a specific error detection or correction feature
    • G06F11/106Correcting systematically all correctable errors, i.e. scrubbing
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G06F11/1012Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices using codes or arrangements adapted for a specific type of error
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44Indication or identification of errors, e.g. for repair
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/08Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0893Caches characterised by their organisation or structure
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0706Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
    • G06F11/0721Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment within a central processing unit [CPU]
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Error detection; Error correction; Monitoring responding to the occurence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0706Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment
    • G06F11/073Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation the processing taking place on a specific hardware platform or in a specific software environment in a memory management context, e.g. virtual memory or cache management
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/818Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for dual-port memories
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/72Masking faults in memories by using spares or by reconfiguring with optimized replacement algorithms
    • GPHYSICS
    • G06COMPUTING; CALCULATING; COUNTING
    • G06FELECTRICAL DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2211/00Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor

Similar Documents

Publication Publication Date Title
Nair et al. ArchShield: Architectural framework for assisting DRAM scaling by tolerating high error rates
Cha et al. Defect analysis and cost-effective resilience architecture for future DRAM devices
Yoon et al. FREE-p: Protecting non-volatile memory against both hard and soft errors
Jian et al. Low-power, low-storage-overhead chipkill correct via multi-line error correction
Abella et al. Low vccmin fault-tolerant cache with highly predictable performance
US7430145B2 (en) System and method for avoiding attempts to access a defective portion of memory
Son et al. CiDRA: A cache-inspired DRAM resilience architecture
Roberts et al. On-chip cache device scaling limits and effective fault repair techniques in future nanoscale technology
Zhang et al. Exploring and optimizing chipkill-correct for persistent memory based on high-density nvrams
Chen et al. RATT-ECC: Rate adaptive two-tiered error correction codes for reliable 3D die-stacked memory
Jian et al. ECC Parity: A technique for efficient memory error resilience for multi-channel memory systems
Kline et al. Flower and fame: A low overhead bit-level fault-map and fault-tolerance approach for deeply scaled memories
Dutt et al. Multi-layer memory resiliency
Lee et al. ECMO: ECC architecture reusing content-addressable memories for obtaining high reliability in DRAM
Kim et al. Relaxfault memory repair
Chen et al. Exploring dynamic redundancy to resuscitate faulty PCM blocks
Longofono et al. Predicting and mitigating single-event upsets in DRAM using HOTH
Xu et al. A scalable wear leveling technique for phase change memory
Zhang et al. ECC cache: A lightweight error detection for phase-change memory stuck-at faults
Asadinia et al. Prolonging lifetime of PCM-based main memories through on-demand page pairing
Kim et al. Balancing reliability, cost, and performance tradeoffs with FreeFault
Wen et al. Read error resilient MLC STT-MRAM based last level cache
US12181967B2 (en) Patrol scrubbing cycle for data storage circuitry
Asadinia et al. OD3P: On-demand page paired PCM
US9141451B2 (en) Memory having improved reliability for certain data types