Esler, 2021 - Google Patents
GE SiC Semiconductor Device Operation at Extreme TemperaturesEsler, 2021
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- Esler D
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GE Research has been working on the design, packaging, and testing of SiC Power semiconductors devices at junction temperatures up to 500° C for the past 5 years. Intrinsically, SiC power devices are able to endure and operate reliably at harsh …
- 229910010271 silicon carbide 0 title abstract description 51
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- H01L2924/1304—Transistor
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- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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