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Wu et al., 2022 - Google Patents

Formation of MoO3/organic interfaces

Wu et al., 2022

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Document ID
2351376164919964933
Author
Wu Y
Hu J
Yang Z
Wang D
Zhao Y
Zhang T
Chen N
Wu D
Lu Z
Publication year
Publication venue
Advanced Materials Interfaces

External Links

Snippet

Molybdenum trioxide (MoO3) has been extensively used in numerous organic semiconductor devices for hole injection and extraction. In this paper, photoelectron spectroscopy combined with cleavage and sputter depth profile has been used to probe the …
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Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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