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Sheng et al., 1984 - Google Patents

GaAs/AlGaAs double heterostructure high electron mobility transistors

Sheng et al., 1984

Document ID
2266655114508841643
Author
Sheng N
Lee C
Chen R
Miller D
Publication year
Publication venue
1984 International Electron Devices Meeting

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Snippet

A selectively doped high electron mobility transistor (HEMT) with 1 µm gate length has been fabricated on AlGaAs/GaAs/AlGaAs double heterostructure material grown by MBE. The sheet carrier density of the two-dimensional electron gas (2-DEG) measured at 77K was …
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