Qi § et al., 2007 - Google Patents
Exchange bias in bilayers based on the ferroelectric antiferromagnet BiFeO3Qi § et al., 2007
- Document ID
- 2117397329203955820
- Author
- Qi § X
- Kim H
- Blamire M
- Publication year
- Publication venue
- Philosophical magazine letters
External Links
Snippet
This paper reports studies of the exchange interaction between the conventional ferromagnets CoFe2O4 and permalloy and the multiferroic antiferromagnet BiFeO3 films. Bilayer films were grown which demonstrated significant exchange bias at room …
- 229910002902 BiFeO3 0 title abstract 5
Classifications
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
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- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L43/00—Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L43/10—Selection of materials
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