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Asbeck, 2019 - Google Patents

Electronic properties of III-nitride materials and basics of III-nitride FETs

Asbeck, 2019

Document ID
1981231918249998510
Author
Asbeck P
Publication year
Publication venue
Semiconductors and Semimetals

External Links

Snippet

The material characteristics of GaN, AlN and InN are first reviewed, with primary focus on parameters important for electronic device applications. The structure and performance characteristics of nitride-based heterostructure FETs are then summarized, illustrating how …
Continue reading at www.sciencedirect.com (other versions)

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