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Haruyama et al., 1994 - Google Patents

Kink effect related to the self-side-gating effect in GaAs MESFET's

Haruyama et al., 1994

Document ID
1969139059807993130
Author
Haruyama J
Ohno Y
Katano H
Nashimoto Y
Publication year
Publication venue
IEEE Transactions on Electron Devices

External Links

Snippet

A kink effect, an abrupt increase in drain current at high drain voltages, was observed in GaAs MESFET's with an Al/sub 0.2/Ga/sub 0.8/As/GaAs heterostructure buffer layer. In these MESFET's, impact ionization occurs at the drain side along the channel current path at high …
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