[go: up one dir, main page]

Momeni et al., 2011 - Google Patents

A 220-to-275GHz traveling-wave frequency doubler with− 6.6 dBm Power at 244GHz in 65nm CMOS

Momeni et al., 2011

Document ID
1964248852666903664
Author
Momeni O
Afshari E
Publication year
Publication venue
2011 IEEE International Solid-State Circuits Conference

External Links

Snippet

There is a growing interest in using CMOS technology in the mm-Wave and terahertz frequency ranges for applications such as spectroscopy, imaging, compact range radars, and remote sensing [1]. Tunable signal sources are one of the main blocks in any such …
Continue reading at ieeexplore.ieee.org (other versions)

Classifications

    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
    • H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/14—Balanced arrangements
    • H03D7/1408—Balanced arrangements with diodes
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B1/00—Details
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H03—BASIC ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements

Similar Documents

Publication Publication Date Title
Momeni et al. A 220-to-275GHz traveling-wave frequency doubler with− 6.6 dBm Power at 244GHz in 65nm CMOS
Momeni et al. A broadband mm-wave and terahertz traveling-wave frequency multiplier on CMOS
Tousi et al. A novel CMOS high-power terahertz VCO based on coupled oscillators: Theory and implementation
Tousi et al. A 283-to-296GHz VCO with 0.76 mW peak output power in 65nm CMOS
US8466832B2 (en) Doppler-inspired, high-frequency signal generation and up-conversion
US8797105B2 (en) Tunable signal source
Adnan et al. A 105-GHz VCO with 9.5% tuning range and 2.8-mW peak output power in a 65-nm bulk CMOS process
Schmalz et al. A 245 GHz transmitter in SiGe technology
Adnan et al. A 105GHz VCO with 9.5% tuning range and 2.8 mW peak output power using coupled colpitts oscillators in 65nm bulk CMOS
Yun et al. A 280-GHz 10-dBm signal source based on InP HBT technology
Chung et al. Design of 94-GHz highly efficient frequency octupler using 47-GHz current-reusing class-C frequency quadrupler
Dussopt et al. A low phase noise silicon 9 GHz VCO and an 18 GHz push-push oscillator
Xiao et al. A 270-GHz tuner-less heterostructure barrier varactor frequency tripler
Yu et al. A 212–260 GHz broadband frequency multiplier chain (× 4) in 130-nm BiCMOS technology
Varonen et al. A 100-GHz balanced FET frequency doubler in 65-nm CMOS
Starke et al. A 360 GHz fully integrated differential signal source with 106.7 GHz continuous tuning range in 90 nm SiGe: C BiCMOS
Wang et al. A high efficiency and high power 165–180 GHz balanced doubler based on Schottky diode
Lee et al. WR-1.5 high-power frequency doubler in 130-nm InP HBT technology
Hsieh et al. Signal generation techniques in CMOS for millimeter-wave and terahertz applications
Breun et al. A 290–359 GHz Push-Push Signal Source with 1.7 dBm P max using Variable Inductance in SiGe BiCMOS Technology
Park et al. $ W $-Band Injection-Locked Frequency Octupler Using a Push–Push Output Structure
Liu et al. High-power single and power-combined 180 GHz Schottky frequency doublers
Jeong et al. H-band high-power and high-efficiency voltage-controlled oscillator IC and waveguide module
Abbasi et al. An E-Band (71–76, 81–86 GHz) balanced frequency tripler for high-speed communications
Ma et al. A 151-to-173 GHz FMCW transmitter achieving 14 dBm P sat with synchronized injection-locked power amplifiers and five in-phase power combining doublers in 65nm CMOS