[go: up one dir, main page]

Lee et al., 1997 - Google Patents

Dry release for surface micromachining with HF vapor-phase etching

Lee et al., 1997

View PDF
Document ID
1877950568537687639
Author
Lee Y
Park K
Lee J
Lee C
Yoo H
Kim C
Yoon Y
Publication year
Publication venue
Journal of microelectromechanical systems

External Links

Snippet

A new method for dry etching of silicon dioxide for surface micromachining is presented to obtain very compliant polysilicon microstructures with negligible stiction problem and to greatly simplify the overall releasing procedure as well. By etching the sacrificial silicon …
Continue reading at www.researchgate.net (PDF) (other versions)

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of micro-structural devices or systems
    • B81C2201/01—Manufacture or treatment of micro-structural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of micro-structural devices or systems
    • B81C2201/01—Manufacture or treatment of micro-structural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing micro-systems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing micro-systems without movable or flexible elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICRO-STRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers

Similar Documents

Publication Publication Date Title
Lee et al. Dry release for surface micromachining with HF vapor-phase etching
Jang et al. Fabrication of MEMS devices by using anhydrous HF gas-phase etching with alcoholic vapor
Bagolini et al. Polyimide sacrificial layer and novel materials for post-processing surface micromachining
Chang et al. Gas-phase silicon micromachining with xenon difluoride
US6666979B2 (en) Dry etch release of MEMS structures
Williams et al. Etch rates for micromachining processing
CA1336057C (en) Formation of microstructures with removal of liquid by freezing and sublimation
US6806205B2 (en) Stiction-free microstructure releasing method for fabricating MEMS device
US6815361B1 (en) Method of fabricating anti-stiction micromachined structures
US6162367A (en) Gas-phase silicon etching with bromine trifluoride
TWI558655B (en) Manufacturing method of MEMS
Fukuta et al. Vapor hydrofluoric acid sacrificial release technique for micro electro mechanical systems using labware
Bustillo et al. Process technology for the modular integration of CMOS and polysilicon microstructures
Anguita et al. HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranes
WO1996008036A1 (en) Process for producing micromechanical structures by means of reactive ion etching
Overstolz et al. A clean wafer-scale chip-release process without dicing based on vapor phase etching
JP2002219699A (en) Silicon surface sacrificial material and metal contaminant removal method
US7431853B2 (en) Selective etching of oxides from substrates
Dyck et al. Supercritical carbon dioxide solvent extraction from surface-micromachined micromechanical structures
Chan et al. Gas phase pulse etching of silicon for MEMS with xenon difluoride
TW200806567A (en) Method of deep etching
US20070178703A1 (en) Method for release of surface micromachined structures in an epitaxial reactor
Lee et al. Fabrication of surface micromachined polysilicon actuators using dry release process of HF gas-phase etching
Hanestad et al. Stiction-free release etch with anhydrous HF/water vapor processes
Lee et al. Gas-phase etching of sacrificial oxides using anhydrous HF and CH/sub 3/OH