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Zou et al., 2017 - Google Patents

Development of 3.6 kV 4H-SiC PiN power diodes

Zou et al., 2017

Document ID
1864959795295076474
Author
Zou X
Yue R
Wang Y
Publication year
Publication venue
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

External Links

Snippet

Based on a 30-um-thick N-type epitaxial layer doped at 3× 10 15 cm-3, PiN diodes with etched junction termination extension (JTE) with floating guard rings (E-JFs) structure were designed and fabricated. Both the anode mesa and the JTE region were formed by ion …
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