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Furuta et al., 2014 - Google Patents

Self-Aligned Bottom-Gate InGaZnO Thin-Film Transistor with Source and Drain Regions Formed by Selective Deposition of Fluorinated SiNx Passivation

Furuta et al., 2014

Document ID
18409118815951610994
Author
Furuta M
Jiang J
Tatsuoka G
Wang D
Publication year
Publication venue
ECS Transactions

External Links

Snippet

A novel doping method of fluorine in IGZO for making thermally stable source and drain (S/D) regions of self-aligned oxide TFTs is presented. Thermally stable IGZO homo-junction could be achieved by the selective deposition of fluorinated silicon nitride (SiNx: F) on top of …
Continue reading at iopscience.iop.org (other versions)

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