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Golovynskyi et al., 2020 - Google Patents

Near-infrared lateral photoresponse in InGaAs/GaAs quantum dots

Golovynskyi et al., 2020

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Document ID
18181028188960878663
Author
Golovynskyi S
Datsenko O
Seravalli L
Trevisi G
Frigeri P
Gombia E
Babichuk I
Lin D
Li B
Qu J
Publication year
Publication venue
Semiconductor Science and Technology

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Abstract Infrared photodetectors with In (Ga) As quantum dot (QD) active element functioning on interband and intersubband transitions are currently actively investigated, however, the vertical sensors were mostly reported. In the current study, a multilayer In 0.4 Ga 0.6 …
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    • H01L31/08—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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