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Nishizawa et al., 1996 - Google Patents

Stoichiometry‐dependent deep levels in n‐type InP prepared by annealing under controlled phosphorus vapor pressure

Nishizawa et al., 1996

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Document ID
18125199317674881095
Author
Nishizawa J
Oyama Y
Suto K
Kim K
Publication year
Publication venue
Journal of applied physics

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Snippet

The photocapacitance method is applied to investigate the stoichiometry‐dependent deep levels in intentionally‐undoped n‐type InP crystals prepared by 4 h annealing at 700° C under controlled phosphorus vapor pressure. The present photocapacitance measurements …
Continue reading at tohoku.repo.nii.ac.jp (PDF) (other versions)

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