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Nam et al., 2012 - Google Patents

Germanium on insulator (GOI) structure using hetero-epitaxial lateral overgrowth on silicon

Nam et al., 2012

Document ID
17886955901562074873
Author
Nam J
Fuse T
Nishi Y
Saraswat K
Publication year
Publication venue
ECS Transactions

External Links

Snippet

A technique to achieve germanium on insulator (GOI) structure on Si platform using hetero- epitaxial lateral overgrowth is presented. On (100) Si wafer, SiO2 is thermally grown, and patterned to locally reveal Si surface on which Ge is grown via selective epitaxy. After filling …
Continue reading at iopscience.iop.org (other versions)

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    • H01L21/02381—Silicon, silicon germanium, germanium
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