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Kambe et al., 1998 - Google Patents

Narrow Band Gap Amorphous Silicon-Based Solar Cells Prepared by High Temperature Processing

Kambe et al., 1998

Document ID
17864742052334498610
Author
Kambe M
Yamamoto Y
Fukutani K
Kamiya T
Fortmann C
Shimizu I
Publication year
Publication venue
MRS Online Proceedings Library (OPL)

External Links

Snippet

Generally higher depositions temperatures are required to prepare solar cells with narrow band gap amorphous silicon intrinsic layers. High processing temperatures require that diffusion resistant substrates and doped layer materials be developed. In the case of pin …
Continue reading at www.cambridge.org (other versions)

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