[go: up one dir, main page]

Jia et al., 2019 - Google Patents

Biaxially strained germanium micro-dot array by hydrogen ion implantation

Jia et al., 2019

View PDF
Document ID
1777308697214154887
Author
Jia P
Zhang M
Ma J
Dong L
Wang G
Chu P
Xue Z
Di Z
Wang X
Publication year
Publication venue
Surface and Coatings Technology

External Links

Snippet

Although strain engineering is an effective method to modify the bandgap of germanium for germanium-based microelectronic, the introduction of biaxial tensile strain with a particular pattern to germanium is challenging. Herein, a facile approach to produce biaxially strained …
Continue reading at www.cityu.edu.hk (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Similar Documents

Publication Publication Date Title
Crnogorac et al. Nano-graphoepitaxy of semiconductors for 3D integration
Deng et al. Anisotropic strain relaxation of graphene by corrugation on copper crystal surfaces
Yamamoto et al. Low threading dislocation Ge on Si by combining deposition and etching
Liao et al. Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices
Gouder et al. Investigation of microstructure and morphology for the Ge on porous silicon/Si substrate hetero-structure obtained by molecular beam epitaxy
Jia et al. Biaxially strained germanium micro-dot array by hydrogen ion implantation
Maronchuk et al. Deposition by liquid epitaxy and study of the properties of nano-heteroepitaxial structures with quantum dots for high efficient solar cells
Tyschenko et al. Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers
Shklyaev et al. Surface morphology transformation under high-temperature annealing of Ge layers deposited on Si (100)
Chen et al. Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation
Vanamu et al. Heteroepitaxial growth on microscale patterned silicon structures
Berencén et al. Formation of n-and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping
Li et al. Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon
Kitagawa et al. In situ observation of low temperature growth of crystalline silicon using reflection high-energy electron diffraction
Wutzler et al. III–V nanocrystal formation in ion-implanted Ge and Si via liquid phase epitaxy during short-time flash lamp annealing
Chen et al. A Versatile Approach to Create Nanobubbles on Arbitrary Two‐Dimensional Materials for Imaging Exciton Localization
Hu et al. Strain-Controlled Silicon Patterning on Sapphire Wafer by Ultrafast Laser-Induced Backward Transfer
Huang et al. Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si: H/a-SiNx: H multilayers
Piñero et al. Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study
Tsunoda et al. Direct formation of strained Si on insulator by laser annealing
Kuryliuk et al. Features of the stress-strain state of Si/SiO2/Ge heterostructures with germanium nanoislands of a limited density
Timofeev et al. Formation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy
Sawano et al. Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering
Baidakova et al. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer
Panknin et al. The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si