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Garcia et al., 2014 - Google Patents

Formation and characterization of tin layers for metal gate electrodes of CMOS capacitors

Garcia et al., 2014

Document ID
17698526540432338810
Author
Garcia A
Diniz J
Swart J
Lima L
dos Santos M
Publication year
Publication venue
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

External Links

Snippet

In this study, ultrathin films (thickness of less than 20 nm) of titanium nitride (TiN) to be used as gate electrodes for CMOS (Complementary Metal Oxide Semiconductor) technology were obtained. These ultrathin films were obtained by electron beam evaporation of ultrathin …
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