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Uoochi et al., 1987 - Google Patents

Temperature Transients of Ion‐Implanted Silicon Wafers during Rapid Thermal Annealing

Uoochi et al., 1987

Document ID
17604061369736366033
Author
Uoochi Y
Shioya Y
Maeda M
Publication year
Publication venue
Journal of the Electrochemical Society

External Links

Snippet

Ion-implanted layers increase the heating rates of silicon wafers during rapid thermal annealing, especially in the case of high dose layers and activated layers. This phenomenon is notable in arsenic ion-implanted layers, but not in boron or boron difluoride …
Continue reading at iopscience.iop.org (other versions)

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